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viva questions p n junction experiment with answer


Posted by:
Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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course viva questions for b tech computer science


Posted by:
Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax algorithm, Data structures, Operating system, Android based Clou..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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010) is required for most semiconductor device fabrication to-day.

3.2 Wafer Specification:-
A typical wafer is made out of extremely pure silicon that is grown into mono-crystalline.

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Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 16th of January 2012 03:57:19 AM
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ics Lab Viva Voce Questions and its answers Laser Parameters



1. What is semi conductor diode laser?
Semiconductor diode laser is a specially fabricated pn junction diode. It emits laser light when it is
forward biased.

2. What is LASER?
The term LASER stands for Light Amplification by Stimulated Emission of Radiation. It is a device
which produces a powerful, monochromatic collimated beam of light in which the waves are coherent.

3. What are the characteristic of laser radiation?
Laser radiations have high intensity, h..................[:=> Show Contents <=:]



Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
pn junction diode, special purpose diode ppt , pm junction diode,
diodes was discovered in 1874 by the German scientist, Karl Ferdinand Braun.
 Thermionic diode principles were rediscovered by Thomas Edison on February 13, 1880 and he took out a patent in 1883, but developed the idea no further. Braun patented the crystal rectifier in 1899. The first radio receiver using a crystal diode was built around 1900 by Greenleaf Whittier Pickard. The first thermionic diode was patented in Britain by John Ambrose Fleming (scientific adviser to the Marconi Company and former Edison employee on November 16, 1904. Pickard received a patent for a silicon crystal dete..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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e reverse saturation current, Is.

Diode Characteristics
Due to differences between devices, each diode has a different voltage across it.
Would like to “Equalize” the voltages.






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Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, band structure of zno si heterostructure , heterojunction in zno p si pdf, band parameter of semiconducter used in heterostructure , diode bas sur zno si n heterojonction these, l heterojonction zno si pdf , zno si heterojunctions,
e Si substrates, as expected.
128
Figure 2a shows the band gap of the ZnO thin
129
films grown on silica substrates, estimated from the
130
plot of (ahm)
2
versus hm. It can be seen from this
131
figure that the band gap decreased from 3.36 eV to
132
3.257 eV with an increase of the oxygen pressure
133
from 0.003 mbar to 0.007 mbar. Series resistance,
134
an inherent resistance of the depletion region in
135
N-ZnO/p-Si heterojunction of all the diodes grown at
136
different oxygen pressures was calculated from the
137
plot of log (I) versus V,
28
which is also shown in
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Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,

31
prompted extensive investigations of ZnO films as
32
transparent electrodes in flat-panel displays,
4
p“n
33
heterojunction diodes,
5“7
thin-film transistors,
8
34
multiple-quantum-well
structures,
9
and
solar
35
cells.
10
Recently we have reported ZnO based all-
36
transparent conducting p“n heterojunction diodes
37
with p-type AgCoO
2
.
11,12
Although ZnO films can be
38
grown by a variety of methods, including radiofre-
39
quency (RF) and direct-current (DC) sputter-
40
ing,
3,13,14
chemical vapor deposition,
15
spray
41
pyrolys..................[:=> Show Contents <=:]



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