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viva questions p n junction experiment with answer


Posted by:
Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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viva questions pn juncti..................[:=> Show Contents <=:]



course viva questions for b tech computer science


Posted by:
Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax algorithm, Dat..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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n:-
To realize Semiconductor devices or an integrated circuit an adequate set of technological steps is required that allows the realization of the same on top surface of a semiconductor wafer.

IC fabrication technology is the process used to create the integrated circuits (silicon chips) that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material.


. FABRICATION OF SILICON P-N JUNCTION DIODE[..................[:=> Show Contents <=:]



Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 12th of May 2014 11:34:12 AM
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111]

1. What is semi conductor diode laser?
Semiconductor diode laser is a specially fabricated pn junction diode. It emits laser light when it is
forward biased.

2. What is LASER?
The term LASER stands for Light Amplification by Stimulated Emission of Radiation. It is a device
which produces a powerful, monochromatic collimated beam of light in which the waves are coherent.

3. What are the characteristic of laser radiation?
Laser radiations have high intensity, high coherence, high monochoromation and high directionality
with less divergence.


AIR WE..................[:=> Show Contents <=:]



Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
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he electrons require in order to pass through the depletion region is equal to the barrier potential. In other words, the electrons give up an amount of energy equivalent to the barrier potential ..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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ode --- A tiny current flows opposite to the arrow in the symbol.

Series-Connected Diodes

Use 2 diodes in series to withstand higher reverse breakdown voltage.
Both diodes..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
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rier difference felt by the electrons at the bottom of
280
the conduction band on the ZnO side. This resulted
281
in a higher turn-on voltage for the p-Si/ZnO junction
282
grown at 0.007 mbar oxygen pressure. However,
283
under higher forward bias, the barrier difference is
284
lowered and the injection of electrons from the bot-
285
tom of the conduction band on the ZnO side to the
286
p-Si increased considerably (as shown in Fig. 8).
287
Thereby the forward current rapidly increased
288
under a higher voltage bias. When the oxygen
289
pressure during the deposition of ZnO..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,

Ó
2007 TMS
Journal :
11664_JEM
Dispatch :
18-12-2007
Pages : 6
h LE
h TYPESET
Article No.: 365
h CP
h DISK
4
4
Author ProofPage 2

UNCORRECTE
D
PROOF
72
73
EXPERIMENTAL
74
The pulsed laser deposition (PLD) of the ZnO
75
films was carried out in a growth chamber, which
76
was first evacuated to a base pressure of 10
-6
mbar.
77
A polycrystalline, stoichiometric, sintered (for 5 h at
78
1200°C) pellet of ZnO with a purity of 99.999% was
79
used as the target for PLD. The third harmonics
80
(355 nm) of a Q-switched Nd:YAG laser with a
81
..................[:=> Show Contents <=:]



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