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viva questions p n junction experiment with answer


Posted by:
Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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viva questions pn junction dio..................[:=> Show Contents <=:]



course viva questions for b tech computer science


Posted by:
Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax algorit..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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ize Semiconductor devices or an integrated circuit an adequate set of technological steps is required that allows the realization of the same on top surface of a semiconductor wafer.

IC fabrication technology is the process used to create the integrated circuits (silicon chips) that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material.


. FABRICATION OF SILICON P-N JUNCTION DIODE

3.1 Int..................[:=> Show Contents <=:]



Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 12th of May 2014 11:34:12 AM
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waves are coherent.

3. What are the characteristic of laser radiation?
Laser radiations have high intensity, high coherence, high monochoromation and high directionality
with less divergence.


AIR WEDGE



1.What is meant by interference of light?
When the two waves superimpose over each other, resultant intensity is modified. The modification in
the distribution of intensity in the region of superposition is called interference.

2.Is there is any energy loss in interference phenomenon?
No, there is only redistribution of energy ie, energy from d..................[:=> Show Contents <=:]



Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
pn junction diode, special purpose diode ppt , pm junction diode,
verse-voltage (PIV). Beyond this point a process called reverse breakdown occurs which causes the device to be damaged along with a large increase in current. For special purpose diodes like the avalanche or zener diodes, the concept of PIV is not applicable since they have a deliberate breakdown beyond a known reverse current such that the reverse voltage is clamped to a known value (called the zener voltage or breakdown voltage). These devices however have a maximum limit to the current and power in the zener or avalanche region.
Some types of semiconductor diode
 Laser diod..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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her reverse breakdown voltage.
Both diodes conduct the same reverse saturation current, Is.

Diode Characteristics
Due to differences between devices, each diode has a different voltage across it.
Would like to “Equalize” the voltages.






..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, band structure of zno si heterostructure , heterojunction in zno p si pdf, band parameter of semiconducter used in heterostructure , diode bas sur zno si n heterojonction these, l heterojonction zno si pdf , zno si heterojunctions,
:
18-12-2007
Pages : 6
h LE
h TYPESET
Article No.: 365
h CP
h DISK
4
4
Author ProofPage 2

UNCORRECTE
D
PROOF
72
73
EXPERIMENTAL
74
The pulsed laser deposition (PLD) of the ZnO
75
films was carried out in a growth chamber, which
76
was first evacuated to a base pressure of 10
-6
mbar.
77
A polycrystalline, stoichiometric, sintered (for 5 h at
78
1200°C) pellet of ZnO with a purity of 99.999% was
79
used as the target for PLD. The third harmonics
80
(355 nm) of a Q-switched Nd:YAG laser with a
81
repetition rate of 10 Hz, pulse width of 9 ns, and
82
..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,
des,
5“7
thin-film transistors,
8
34
multiple-quantum-well
structures,
9
and
solar
35
cells.
10
Recently we have reported ZnO based all-
36
transparent conducting p“n heterojunction diodes
37
with p-type AgCoO
2
.
11,12
Although ZnO films can be
38
grown by a variety of methods, including radiofre-
39
quency (RF) and direct-current (DC) sputter-
40
ing,
3,13,14
chemical vapor deposition,
15
spray
41
pyrolysis,
16
and electron cyclotron resonance-as-
42
sisted molecular-beam epitaxy,
17
we used pulsed
43
laser deposition (PLD)
1,18,19
to de..................[:=> Show Contents <=:]



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