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ELECTRON SCATTERING RESISTIVITY OF METALS ppt


Posted by: seminar surveyer
Created at: Tuesday 04th of January 2011 04:09:15 AM
Last Edited Or Replied at :Tuesday 04th of January 2011 04:09:15 AM
seminar on resistivity of metals , electron scattering and metal resistivity ppt, electron scattering resistivity of metals pdf , electron scattering in metals, resistivity of metals , electron electron scattering in metals, electron scattering ppt , electron scattering metal resistance powerpoint,
it may be shown that the scattering in these monovalent metals is isotropic . Then, ť=tc & λ = Vx * ťc .The values of man free path at 0 0c are several hundred angstroms.

We find from the graph shown that as we goes on reducing the temp of a metal then it’s resistivity also decreases & vice versa but assume a constant value of temp. below 6 K.
In general, the resistivity of a perfect, pure single crystal of a metal approaches to zero as temp. T approaches zero. This signifies that at very low temp. the mean free path λ assumes microscopic values .Th..................[:=> Show Contents <=:]



SEASONAL INFLUENCES ON SAFETY OF SUBSTATION GROUNDING SYSTEMS full report


Posted by: computer science technology
Created at: Thursday 21st of January 2010 01:13:25 AM
Last Edited Or Replied at :Saturday 25th of February 2012 12:39:46 AM
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analysis.
The main function of the surface material with high resistivity is to increase the limits of step and touch voltages. According to IEEE Standards the limits of step and touch voltages in V for a body weight of 50 kg can be calculated by using the formula given below
Estep = (1000+6 Cs Ps) 0.116/t
Etouch = (1000+1.5 Cs Ps) 0.116/t
Ps =resistivity of surface layer
t =time duration of shock current in seconds
Cs =surface layer derating factor
Cs =1- 0.09 (1-P/P)/2hs+0.09
hs =thickness of the surface material in meters
P =resistivity of earth beneath the surface material
Th..................[:=> Show Contents <=:]



Journal of Alloys and Compound JALCOM -


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:43:16 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:43:16 PM
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A) Mg
2+
ions occupy tetrahedral sites
while Ge
3+
ions occupy octahedral sites in crystal lattice. The
wide optical band gap of Mg
2
GeO
4
makes it as a suitable can-
didate for wide band gap oxide phosphor. However, efficient
high field electroluminescence from Mg
2
GeO
4
host material
is not observed due to its high band gap and inefficient trans-
fer of energy from the host to activator. Also Mg
2
GeO
4
: Mn
phosphor has not been widely studied for luminescent appli-
cations. Co-doping has been proved as an excellent technique
for engineering the band gap [18,24â..................[:=> Show Contents <=:]



SEMINAR REPORT On Giant Magnetoresistance Effect


Posted by: Computer Science Clay
Created at: Saturday 13th of June 2009 02:36:40 PM
Last Edited Or Replied at :Saturday 13th of June 2009 02:36:40 PM
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that could make multilayers in the same
slow-and-perfect way that Gruenberg and Fert had. So Parkin and his colleague, Kevin
P. Roche, tried a faster and less-precise process common in disk-drive manufacturing:
sputtering. To their astonishment and delight, it worked! Parkinâ„¢s team saw GMR in the
first multilayers they made. This demonstration meant that they could make enough
variations of the multilayers to help discover how GMR worked, and it gave Almaden's
Bruce Gurney and co-workers hope that a room-temperature, low-field version could
work as a super-sensitive sensor ..................[:=> Show Contents <=:]



ANALYSIS OF RESIDUAL STRESSES IN MAIN CRANKSHAFT BEARINGS AFTER INDUCTION SURFACE


Posted by: computer science crazy
Created at: Friday 17th of April 2009 07:52:50 AM
Last Edited Or Replied at :Friday 21st of December 2012 11:11:44 PM
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oduce compressive or tensile residual stresses depending on the type of grinding wheel and the grinding conditions.

¢ Induction surface hardening creates a very desirable residual stress state at the surface and residual stress distribution below the surface

¢ Residual stresses are always of a compressive nature and are usually present to the depth of the induction surface hardened layer

¢ Additional grinding of the induction surface hardened surface has an adverse effect on the stress state in the surface layer, since grinding always induces tensile residual stresses

¢..................[:=> Show Contents <=:]



HIGH TEMPERATURE SUPER CONDUCTIVITY


Posted by: seminar projects crazy
Created at: Friday 30th of January 2009 01:28:20 PM
Last Edited Or Replied at :Friday 30th of January 2009 01:28:20 PM
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amounts of currents can be applied to electric power devices such as motors and generators and to electricity transmission in power lines. For example, superconductors can carry as much as 100 times the electricity ordinary copper or aluminium wires of same size.Scientists had been intrigued with the concept of superconductivity since its discovery in the early 1900?s, but the extreme low temperature the phenomenon required was a barrier to practical and low cost application. This all changed in 1986 when a new class of ceramic super conductors were discovered that ?SUPERCONDUCTED? at higher ..................[:=> Show Contents <=:]



EXTRAORDINARY MAGNETO RESISTANCE


Posted by: seminar projects crazy
Created at: Friday 30th of January 2009 01:20:50 PM
Last Edited Or Replied at :Friday 30th of January 2009 01:20:50 PM
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f 13 Gb/sq. inch. The introduction of this technology can solve the problem of data handling to a large extent. In the present world scenario this technology is a much awaited one as it can really revolutionize the data handling speeds. Extr..................[:=> Show Contents <=:]



Tamper Resistance


Posted by: computer science crazy
Created at: Sunday 21st of September 2008 11:38:04 PM
Last Edited Or Replied at :Sunday 21st of September 2008 11:38:04 PM
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attributed to security, and (5) scalability concerns. Immutable storage techniques can enhance tamper-resistant techniques. Digital watermarking is not appropriate for tamper-resistance implemented in the storage system rather than at the application level...................[:=> Show Contents <=:]



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