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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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SDR diode consists of a single avalanche zone and a single drift zone with p+nn+ structure.
2. Double drift region (DDR) – A DDR diode has a p+pnn+ structure that consist of two drift layers, one for electrons and other for holes on either side of the central avalanche zone.
3. Double avalanche region (DAR) – The DAR diode has a p+nipn+ structure that consist of one drift zone sandwiched between two avalanche zones. The electrons and holes from the two junctions travel across the central i-region in opposite directions and deliver power.
Applications
These diodes make excellent mi..................[:=> Show Contents <=:]



Experimental Theoretical Characterization of CNTs


Posted by: seminar class
Created at: Monday 14th of February 2011 10:29:27 PM
Last Edited Or Replied at :Monday 14th of February 2011 10:29:27 PM
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imental Characterization using SEM.
• Theoretical Characterization by observing IV characteristics of CNT using virtual nanolab.
• Numerical modeling of CNTFET.
How actually a nanotube is made ???
Classification of CNTs
Single walled CNT Diameter between 1 to 20 nm and length lies between 100 nm to few microns.
Multiwalled CNT consisting of nested coaxial array of single walled nanotubes separated from one another by 0.34 nm.
Experimental approach to CNTs
Applied Methodology
 “Arc Plasma Method”
 Schematic of Arc Plasma Method..................[:=> Show Contents <=:]



IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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Summary
IMPATT stands for Impact Avalanche And Transit Time
Operates in reverse-breakdown (avalanche) region
Applied voltage causes momentary breakdown once per cycle
This starts a pulse of current moving through the device
Frequency depends on device thickness

IMPact Ionization Transit Time
IMPATT devices can be used for oscillator and amplifier applications
They can be fabricated with Si, GaAs, and InP
Can be used up 400 GHz.
Noisy oscillator
In general, IMPATTs have 10 dB higher AM noise than that of Gunn diodes
IMPATT diode is not suitable for use as a local oscillator i..................[:=> Show Contents <=:]



PRACTICAL TRAINING At Z-LED Light full report


Posted by: project topics
Created at: Saturday 24th of April 2010 10:22:35 AM
Last Edited Or Replied at :Saturday 24th of April 2010 10:22:35 AM
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rcent of the design power level out of the same transformer and integrated MOSFET. The challenge in these systems is to design a power supply that can provide the necessary peaks when needed, but does not burden the application with peak costs.
Features and benefits of TinySwitch-PK Power Supply Control IC includes:
¢ Lowest System Cost with Enhanced Flexibility
¢ Simple ON/OFF control, no loop compensation needed
¢ Unique Peak Mode feature extends power range without increasing transformer size
¢ Maximum frequency and current limit boosted at peak loads
¢ Selectable curre..................[:=> Show Contents <=:]



Integrated gate commutated thyristor IGCT Seminar REPORT


Posted by: electronics seminars
Created at: Thursday 31st of December 2009 08:04:04 AM
Last Edited Or Replied at :Thursday 31st of December 2009 08:04:04 AM
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encouragement.
I would also like to thank my seminars guide Mrs. Sobha M (Asst. Professor, Department of EEE), Asst. Prof. Gylson Thomas. (Staff in-charge, Department of EEE)..................[:=> Show Contents <=:]



IGCT


Posted by: sonu
Created at: Sunday 18th of October 2009 08:57:16 AM
Last Edited Or Replied at :Tuesday 20th of October 2009 04:40:54 AM
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i wanna noe more abt integrated gate co..................[:=> Show Contents <=:]



IGCT


Posted by: computer science crazy
Created at: Tuesday 07th of April 2009 01:33:26 PM
Last Edited Or Replied at :Monday 27th of July 2009 01:55:53 AM
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in an integrated package. By offering four levels of component packaging and integration, it permits simultaneous improvement in..................[:=> Show Contents <=:]



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