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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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es from the two junctions travel across the central i-region in opposite directions and deliver power.
Applications
These diodes make excellent microwave generators for many applications like:-
1. Parametric amplifier,
2. Parametric up converter,
3. Parametric down converter,
4. Negative resistance parametric amplifier.
Summary
IMPATT stands for Impact Avalanche And Transit Time
Operates in reverse-breakdown (avalanche) region
Applied voltage causes momentary breakdown once per cycle
This starts a pulse of current moving through the device
Freque..................[:=> Show Contents <=:]



Experimental Theoretical Characterization of CNTs


Posted by: seminar class
Created at: Monday 14th of February 2011 10:29:27 PM
Last Edited Or Replied at :Monday 14th of February 2011 10:29:27 PM
charecterization of cnt ppt , cnt i v characteristics, cntfet technical seminar decomentation , plasma physics, cnt characterization , characterization of cnts,
methods.
Experimental Characterization using SEM
Sample for SEM
Results from analysis
• Theoretical Characterization
I-V Characteristics of CNT
• Virtual nanolab is used for Characterization.
• Simulations run on it by selecting the carbon nanotube and placing it between two gold electrodes with gold-cnt distance between 2.002 Å to 2.027 Å.
• IV characteristics are observed by changing the (n,m) values of the chiral vector
Scaling Obstacles
• Diffusion areas will no longer be separated by a low doped channel region.
• Equivalen..................[:=> Show Contents <=:]



IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
impatt diode ppt , impatt diode, what is impatt , impatt diode structure, ppt on impatt diodes , principle of operation of an impatt diode, impatte diode in pdf , impatt diode applications, gunn diode characteristics ppt , impatt diode characteristics, pdf of impatt diode charesteristic n operation , impatt ppt, characteristics of impatt diodes , impatt diode i v characteristic, ppt for impatt diode , ppt on impatt diode, impatt diode working ppt , ppt impatt diode, impatt , impatt dioade, ppt of microwave impatt diode , operation of impatt diode, impatt diode based projects , impatt negative resistance, noises in gunn devices ppt microwave devices and circuits , read diode ppt,
al avalanche zone.
3. Double avalanche region (DAR) – The DAR diode has a p+nipn+ structure that consist of one drift zone sandwiched between two avalanche zones. The electrons and holes from the two junctions travel across the central i-region in opposite directions and deliver power.
Applications
These diodes make excellent microwave generators for many applications like:-
1. Parametric amplifier,
2. Parametric up converter,
3. Parametric down converter,
4. Negative resistance parametric amplifier.
Summary
IMPATT stands for Impact Avalanche An..................[:=> Show Contents <=:]



PRACTICAL TRAINING At Z-LED Light full report


Posted by: project topics
Created at: Saturday 24th of April 2010 10:22:35 AM
Last Edited Or Replied at :Saturday 24th of April 2010 10:22:35 AM
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350“370 nm. Green LEDs manufactured from the InGaN-GaN system are far more efficient and brighter than green LEDs produced with non-nitride material systems.
White light
There are two primary ways of producing high intensity white-light using LEDs. One is to use individual LEDs that emit three primary colors “ red, green, and blue, and then mix all the colors to produce white light. The other is to use a phosphor material to convert monochromatic light from a blue or UV LED to broad-spectrum white light, much in the same way a fluorescent light bulb works.
Due to metamerism, it ..................[:=> Show Contents <=:]



Integrated gate commutated thyristor IGCT Seminar REPORT


Posted by: electronics seminars
Created at: Thursday 31st of December 2009 08:04:04 AM
Last Edited Or Replied at :Thursday 31st of December 2009 08:04:04 AM
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duced power system cost, and enhanced reliability and availability. Also, by providing pre- engineered switch modules, IGCT enables medium-voltage equipment designers to develop their products faster.

Figure shows, Cross-section through a GTO thyristor (left), diode (center) and GCT (right). Showing the transparent emitter and buffer layer of the GCT allows a thinner n-base layer. This permits integration of the freewheeling diode in the same structure, plus snubbreless operation in combination with low inductive packaging and gate drive circuitry.
THE SECRET OF IGCT TECH..................[:=> Show Contents <=:]



IGCT


Posted by: sonu
Created at: Sunday 18th of October 2009 08:57:16 AM
Last Edited Or Replied at :Tuesday 20th of October 2009 04:40:54 AM
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i wanna noe mor..................[:=> Show Contents <=:]



IGCT


Posted by: computer science crazy
Created at: Tuesday 07th of April 2009 01:33:26 PM
Last Edited Or Replied at :Monday 27th of July 2009 01:55:53 AM
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nd the turn-off waveforms and safe operating area are identical to those of a transistor.

IGCT technology brings together the power handling device (GCT) and the device control circuitry (freewheeling diode and gate drive) in an integrated package. By offering four levels of component packaging and integration, it permits simultaneous improvement in four interrelated areas; low switching and conduction losses at medium voltage, simplified circuitry for operating the power semiconductor, reduced power system cost, and enhanced reliability and availability. Also, by providing pre- engineered ..................[:=> Show Contents <=:]



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