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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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.
The device consists essentially of two regions:
1) the n+p region, at which avalanche multiplication occurs, and
2) the i (essentially intrinsic) region, through which generated holes must drift in moving to p+ contact.


Principle of operation


IMPATT diode
IMPATT I-V Characteristics
Small Signal model
Some IMPATT Circuits
Classification
Device structure is based on the doping profile. The three basic types of Impatt diodes are:-
1. Single drift region (SDR) - The SDR diode consists of a single avalanche zone and a single drift ..................[:=> Show Contents <=:]



Experimental Theoretical Characterization of CNTs


Posted by: seminar class
Created at: Monday 14th of February 2011 10:29:27 PM
Last Edited Or Replied at :Monday 14th of February 2011 10:29:27 PM
charecterization of cnt ppt , cnt i v characteristics, cntfet technical seminar decomentation , plasma physics, cnt characterization , characterization of cnts,
in the range of 2-5 micrometers (most of them in the range of 3-4 µm).
 The diameter of CNTs are lying in the range of 10-70 nanometers (m..................[:=> Show Contents <=:]



IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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le of operation

IMPATT diode
IMPATT I-V Characteristics
Small Signal model
Some IMPATT Circuits
Classification
Device structure is based on the doping profile. The three basic types of Impatt diodes are:-
1. Single drift region (SDR) - The SDR diode consists of a single avalanche zone and a single drift zone with p+nn+ structure.
2. Double drift region (DDR) – A DDR diode has a p+pnn+ structure that consist of two drift layers, one for electrons and other for holes on either side of the central avalanche zone.
3. Double avalanche region (DAR) – The DAR di..................[:=> Show Contents <=:]



PRACTICAL TRAINING At Z-LED Light full report


Posted by: project topics
Created at: Saturday 24th of April 2010 10:22:35 AM
Last Edited Or Replied at :Saturday 24th of April 2010 10:22:35 AM
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s that much light will be reflected back in to the material at the material/air surface interface. Therefore Light extraction in LEDs is an important aspect of LED production, subject to much research and development.
Efficiency and operational parameters
Typical indicator LEDs are designed to operate with no more than 30“60 milliwatts of electrical power. Around 1999, Philips Lumileds introduced power LEDs capable of continuous use at one watt . These LEDs used much larger semiconductor die sizes to handle the large power inputs. Also, the semiconductor dies were mounted onto ..................[:=> Show Contents <=:]



Integrated gate commutated thyristor IGCT Seminar REPORT


Posted by: electronics seminars
Created at: Thursday 31st of December 2009 08:04:04 AM
Last Edited Or Replied at :Thursday 31st of December 2009 08:04:04 AM
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onductors.

BIBLIOGRAPHY
1. ABB Review on Power Semiconductor May 2000
2. Power Electronics by Dr. P.S. Bimbra
3. Power Electronics by Mohd. H Rashid
4. Power Electronics by Ned Mohan
5. Power Electronics by P.C. Sen

ACKNOWLEDGEMENT
I express my sincere gratitude to Dr.Nambissan, Prof. & Head, Department of Electrical and Electronics Engineering, MES College of Engineering, Kuttippuram, for his cooperation and encouragement.
I would also like to thank my seminars guide Mrs. Sobha M (Asst. Professor, Department of EEE), Asst. Prof. Gylson Thomas. (Staff in-charge, Department o..................[:=> Show Contents <=:]



IGCT


Posted by: sonu
Created at: Sunday 18th of October 2009 08:57:16 AM
Last Edited Or Replied at :Tuesday 20th of October 2009 04:40:54 AM
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i wanna noe more abt integrated gate com..................[:=> Show Contents <=:]



IGCT


Posted by: computer science crazy
Created at: Tuesday 07th of April 2009 01:33:26 PM
Last Edited Or Replied at :Monday 27th of July 2009 01:55:53 AM
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off. The lighter shows the variation of the anode current during turn-off process of IGCT.

GTO and thyristor are four layer (npnp) devices. As such, they have only two stable points their characteristics-'on' and 'off'. Every state in between is unstable and results in current filamentation. The inherent instability is worsened by processing imperfections. This has led to the widely accepted myth that a GTO cannot be operated without a snubber. Essentially, the GTO has to be reduced to a stable pnp device i.e. a transistor, for the few critical microseconds during turn-off.

To stop the ..................[:=> Show Contents <=:]



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