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FRAM


Posted by: seminar projects crazy
Created at: Friday 30th of January 2009 12:16:02 PM
Last Edited Or Replied at :Friday 30th of January 2009 12:16:02 PM
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e, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.

A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor to store the binary data, and one transistor that provide access to the capacitor or amplify its content for a read operation. Once a cell is accessed for a read operation, its data are pre..................[:=> Show Contents <=:]



AFM Based Storage


Posted by: nit_cal
Created at: Friday 30th of October 2009 04:41:12 AM
Last Edited Or Replied at :Friday 30th of October 2009 04:41:12 AM
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be achieved by making use of massive parallelism. In our millipede system concept, an array consisting of th..................[:=> Show Contents <=:]



Magnetoresistive RAM


Posted by: Electrical Fan
Created at: Saturday 10th of October 2009 06:08:03 AM
Last Edited Or Replied at :Saturday 10th of October 2009 06:08:03 AM
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after the system has been powered down.In light of its many advantages, MRAM has the potential to enter many memory applications in a few years. The technology is seen as a future replacement for flash memory, another type of non..................[:=> Show Contents <=:]



Magnetic RAM


Posted by: computer science crazy
Created at: Thursday 03rd of September 2009 05:54:46 AM
Last Edited Or Replied at :Sunday 05th of February 2012 10:58:11 PM
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n dependent tunneling.

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active pixel sensor APS


Posted by: Computer Science Clay
Created at: Saturday 28th of February 2009 11:02:54 PM
Last Edited Or Replied at :Saturday 28th of February 2009 11:02:54 PM
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S APS pixel consists of three transistors as well as a photodetector.
The photodetector is usually a photodiode, though photogate detectors are used in some devices and can offer lower noise through the use of correlated double sampling. Light causes an accumulation, or integration of charge on the 'parasitic' capacitance of the photodiode, creating a voltage change related to the incident light.
One transistor, Mrst, acts as a switch to reset the device. When this transistor is turned on, the photodiode is effectively connected to the power supply, VRST, clearing all integrated charge. Sinc..................[:=> Show Contents <=:]



FRAM


Posted by: Computer Science Clay
Created at: Wednesday 25th of February 2009 03:11:13 AM
Last Edited Or Replied at :Wednesday 25th of February 2009 03:11:13 AM
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d is applied and the charges displace from their original position spontaneous polarization occurs and displacement becomes evident in the crystal structure of the material. Importantly, the displacement does not disappear in t..................[:=> Show Contents <=:]



FRAM


Posted by: seminar projects crazy
Created at: Friday 30th of January 2009 12:16:02 PM
Last Edited Or Replied at :Friday 30th of January 2009 12:16:02 PM
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ric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor to store the binary data, and one transistor that provide access to the capacitor or amplify its content for a read operation. Once a cell is accessed for a read operation, its data are presented in the form of an analog signal to a sense amplifier, where they are compared against a reference voltage to determine their logic level.

Ferroelectric memories have borrowed many cir..................[:=> Show Contents <=:]



RD RAM


Posted by: computer science crazy
Created at: Sunday 21st of September 2008 11:57:02 PM
Last Edited Or Replied at :Sunday 21st of September 2008 11:57:02 PM
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en improving at slower rate. In order to keep up in performance and reliability with processor technology it is necessary to make considerable improvements in the memory access time.

The Rambus founders emerged with a memory technology-RD RAM. RDRAM memory provides the highest bandwidth -2.1GB/sec. per pin- from the fewest pins at five-times the speed of industry available DRAM. The RDRAM memory channel achieves its high-speed operation through several innovative techniques including separate control and address buses, highly efficient protocol, low voltage signaling, and precise clocking ..................[:=> Show Contents <=:]



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