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FRAM


Posted by: seminar projects crazy
Created at: Friday 30th of January 2009 12:16:02 PM
Last Edited Or Replied at :Friday 30th of January 2009 12:16:02 PM
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oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor to store the binary data, and one transistor that provide access to the capacitor or amplify its content for a read operation. Once a cell is accessed for a read operation, its data are presented in the form of an analog signal to a sense amplifier, where they are compared against a reference voltage to determine their logic level.

Ferroelectric memories have borrowed many circuit techniques (such as folded-bit line architecture) f..................[:=> Show Contents <=:]



AFM Based Storage


Posted by: nit_cal
Created at: Friday 30th of October 2009 04:41:12 AM
Last Edited Or Replied at :Friday 30th of October 2009 04:41:12 AM
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igh-density data storage system is based on micromechanical (MEMS*) components borrowed from atomic force microscopy (AFM). Tiny depressions created with an AFM tip in a polymer medium represent stored data bits that can then be read back by the same tip. Data written in this way can also be erased using the same tip, and the polymer medium can be reused thousands of times. This thermomechanical storage technique is capable of achieving data densities exceeding 1 Tb/in², well beyond the expected limits of magnetic recording. Although the read-back rate of an individual probe is limited..................[:=> Show Contents <=:]



Magnetoresistive RAM


Posted by: Electrical Fan
Created at: Saturday 10th of October 2009 06:08:03 AM
Last Edited Or Replied at :Saturday 10th of October 2009 06:08:03 AM
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onic products by storing more information, accessing it faster and using less battery power than conventional electronic memory. MRAM can be thought of as a breakthrough in memory technology that could significantly increase battery life of portable computing devices (laptops, PDAs etc.) and lead to Ëœinstant-onâ„¢ computers. Unlike conventional computer chips, MRAM chips use magnetization to store information, instead of electrical charges. The information on MRAM memories remains intact even after the system has been powered down.In light of its many advantages, MRAM has the potential ..................[:=> Show Contents <=:]



Magnetic RAM


Posted by: computer science crazy
Created at: Thursday 03rd of September 2009 05:54:46 AM
Last Edited Or Replied at :Sunday 05th of February 2012 10:58:11 PM
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. having entered into a license agreement allowing him to sublicense Honeywell MRAM technology for commercial applications. Dr. Pohm, Dr. Daughton, and others at NVE continued to improve basic MRAM technology, and innovated new techniques which take advantage of revolutionary advances in magnetoresistive devices, namely giant magnetoresistance and spin dependent tunneling.

Today there is a tremendous potential for MRAM as a nonvolatile, solid state memory to replace flash memory and EEPROM where fast writing or high write endurance is required, and in the longer term as a general purpose re..................[:=> Show Contents <=:]



active pixel sensor APS


Posted by: Computer Science Clay
Created at: Saturday 28th of February 2009 11:02:54 PM
Last Edited Or Replied at :Saturday 28th of February 2009 11:02:54 PM
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perates in soft reset.

The second transistor, Msf, acts as a buffer (specifically, a source follower), an amplifier which allows the pixel voltage to be observed without removing the accumulated charge. Its power supply, VDD, is typically tied to the power supply of the reset transistor.

The third transistor, Msel, is the row-select transistor. It is a switch that allows a single row of the pixel array to be read by the read-out electronics.

Array: A typical two-dimensional array of pixels is organized into rows and columns. Pixels in a given row share reset lines, so that a whole row..................[:=> Show Contents <=:]



FRAM


Posted by: Computer Science Clay
Created at: Wednesday 25th of February 2009 03:11:13 AM
Last Edited Or Replied at :Wednesday 25th of February 2009 03:11:13 AM
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ield. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor memories of today (DRAM's, EEPROM's, and FRAM's). Ferromagnetic cores, however, were too bulky and expensive compared to the smaller, low-power semiconductor memories. In place of ferromagnetic cores ferroelectric memories are a good substitute.

The term ferroelectric' indicates the similarity, despite the lack of iron in the materials themselves.Ferroelectric memory exhibit short programming time, low power consumption a..................[:=> Show Contents <=:]



FRAM


Posted by: seminar projects crazy
Created at: Friday 30th of January 2009 12:16:02 PM
Last Edited Or Replied at :Friday 30th of January 2009 12:16:02 PM
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ch as folded-bit line architecture) from DRAM?s due to similarities of their cells and DRAM?s maturity. Some architectures are reviewed here...................[:=> Show Contents <=:]



RD RAM


Posted by: computer science crazy
Created at: Sunday 21st of September 2008 11:57:02 PM
Last Edited Or Replied at :Sunday 21st of September 2008 11:57:02 PM
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RAM capacities have been improving at more than fifty percent per year. However the speed and access time of the memory have been improving at slower rate. In order to keep up in performance and reliability with processor technology it is necessary to make considerable improvements in the memory access time.

The Rambus founders emerged with a memory technology-RD RAM. RDRAM memory provides the highest bandwidth -2.1GB/sec. per pin- from the fewest pins at five-times the speed of industry available DRAM. The RDRAM memory channel achieves its high-speed operation through several innovative t..................[:=> Show Contents <=:]



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