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FRAM


Posted by: seminar projects crazy
Created at: Friday 30th of January 2009 12:16:02 PM
Last Edited Or Replied at :Friday 30th of January 2009 12:16:02 PM
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ies. In place of ferromagnetic cores ferroelectric memories are a good substitute. The term ?ferroelectric? indicates the similarity, despite the lack of iron in the materials themselves.

Ferroelectric memory is a new type of semiconductor memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.

A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top fo..................[:=> Show Contents <=:]



AFM Based Storage


Posted by: nit_cal
Created at: Friday 30th of October 2009 04:41:12 AM
Last Edited Or Replied at :Friday 30th of October 2009 04:41:12 AM
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in its own small storage field. The read- and write-array can be fabricated in large quantities using wellestablished, low-cost semiconductor microfabrication techniques. *MEMS: Micro-electrical-mechanical system.
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Magnetoresistive RAM


Posted by: Electrical Fan
Created at: Saturday 10th of October 2009 06:08:03 AM
Last Edited Or Replied at :Saturday 10th of October 2009 06:08:03 AM
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es of many of the common forms of memory “ the low cost and high capacity of dynamic RAM; the high speed of static RAM; and the permanence of Flash Memory- and has the potential to significantly improve many electronic products by storing more information, accessing it faster and using less battery power than conventional electronic memory. MRAM can be thought of as a breakthrough in memory technology that could significantly increase battery life of portable computing devices (laptops, PDAs etc.) and lead to ˜instant-on™ computers. Unlike conventional computer chips, MRAM chips..................[:=> Show Contents <=:]



Magnetic RAM


Posted by: computer science crazy
Created at: Thursday 03rd of September 2009 05:54:46 AM
Last Edited Or Replied at :Sunday 05th of February 2012 10:58:11 PM
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ndom access memory. NVE has a substantial patent portfolio containing 10 MRAM patents, and is willing to license these, along with 12 Honeywell MRAM patents, to companies interested in manufacturing MRAM. In addition, NVE is considering internal production of certain niche MRAM produ..................[:=> Show Contents <=:]



active pixel sensor APS


Posted by: Computer Science Clay
Created at: Saturday 28th of February 2009 11:02:54 PM
Last Edited Or Replied at :Saturday 28th of February 2009 11:02:54 PM
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tor.
The photodetector is usually a photodiode, though photogate detectors are used in some devices and can offer lower noise through the use of correlated double sampling. Light causes an accumulation, or integration of charge on the 'parasitic' capacitance of the photodiode, creating a voltage change related to the incident light.
One transistor, Mrst, acts as a switch to reset the device. When this transistor is turned on, the photodiode is effectively connected to the power supply, VRST, clearing all integrated charge. Since the reset transistor is n-type, the pixel operates in soft rese..................[:=> Show Contents <=:]



FRAM


Posted by: Computer Science Clay
Created at: Wednesday 25th of February 2009 03:11:13 AM
Last Edited Or Replied at :Wednesday 25th of February 2009 03:11:13 AM
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ith a ferroelectric material (lead zirconate titanate (PZT) is a common material used)-when an electric field is applie..................[:=> Show Contents <=:]



FRAM


Posted by: seminar projects crazy
Created at: Friday 30th of January 2009 12:16:02 PM
Last Edited Or Replied at :Friday 30th of January 2009 12:16:02 PM
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d for a read operation, its data are presented in the form of an analog signal to a sense amplifier, where they are compared against a reference voltage to determine their logic level.

Ferroelectric memor..................[:=> Show Contents <=:]



RD RAM


Posted by: computer science crazy
Created at: Sunday 21st of September 2008 11:57:02 PM
Last Edited Or Replied at :Sunday 21st of September 2008 11:57:02 PM
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n in the future...................[:=> Show Contents <=:]



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