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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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ode.
The device consists essentially of two regions:
1) the n+p region, at which avalanche multiplication occurs, and
2) the i (essentially intrinsic) region, through which generated holes must drift in moving to p+ contact.


Principle of operation


IMPATT diode
IMPATT I-V Characteristics
Small Signal model
Some IMPATT Circuits
Classification
Device structure is based on the doping profile. The three basic types of Impatt diodes are:-
1. Single drift region (SDR) - The SDR diode consists of a single avalanche zone and a single dri..................[:=> Show Contents <=:]



Network Traffic Analysis


Posted by: mechanical engineering crazy
Created at: Wednesday 05th of August 2009 06:45:27 AM
Last Edited Or Replied at :Wednesday 05th of August 2009 06:45:27 AM
network traffic compression , network traffic congestion, what is network traffic engineering , nsasoft network traffic emulator, network traffic encryption , network traffic simulator, network traffic engineering , network traffic control software, network traffic controller , network traffic check, network traffic counter , network traffic calculator, network traffic classification , network traffic characteristics of data centers in the wild, network traffic capture , network traffic control, Network Traffic , Analysis, Traffic , Network,
This session is intended to help new or beginning network administrators learn how to use packe..................[:=> Show Contents <=:]



Spectral and nonlinear optical characteristics of nanocomposites of ZnO


Posted by: super
Created at: Saturday 13th of June 2009 10:22:20 PM
Last Edited Or Replied at :Saturday 13th of June 2009 10:22:20 PM
ZnO,
ear refractive index substantially
increases in the nanocomposites, as compared to pure ZnO
and CdS colloids. The enhancement of the third-order non-
linearity can be attributed to the concentration of exciton
oscillator strength.
3
Since n
2
increases with absorption, ther-
mal nonlinearity is also taken into account. It is reported that
if the thermal contributions are to dominate, then, there will
be an increase in n
2
with increase in absorption.
28
The figure
of merit for the third-order nonlinearity measured by using z
scan technique shows an increase in the particle siz..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
Diodes , Heterojunction, n ZnOp Si , Characteristics, Electrical , band structure of zno si heterostructure, heterojunction in zno p si pdf , band parameter of semiconducter used in heterostructure, diode bas sur zno si n heterojonction these , l heterojonction zno si pdf, zno si heterojunctions ,
ion,
15
spray
41
pyrolysis,
16
and electron cyclotron resonance-as-
42
sisted molecular-beam epitaxy,
17
we used pulsed
43
laser deposition (PLD)
1,18,19
to deposit high-quality
44
ZnO films because of its effectiveness and amena-
45
bility to different growth conditions.
20
For the
46
present study we fabricated heterojunctions of
47
n-type ZnO on p-type Si, which has many advanta-
48
ges such as low cost, large wafer size, and the pos-
49
sibility of integrating oxide semiconductors with
50
already highly matured silicon technology.
51
The growth of ZnO on Si ..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes , Heterojunction, n ZnOp Si , Characteristics, Electrical , impedance heterojunction,

243
The band structure of n-ZnO/p-Si at the hetero-
244
junction can be constructed using the Anderson
245
model
32
by assuming continuity of vacuum levels
246
and neglecting the effects of dipole and interfacial
247
states. A similar band structure has been suggested
248
for doped and pure ZnO/Si heterojunction by P Chen
249
et al.
26,33
Figures 7a and 8 show the constructed
250
band structure of the n-ZnO/p-Si heterojunction
251
fabricated at the 0.007 mbar oxygen pressure under
252
zero and forward bias, respectively. Values of the
253
band gaps of E
g
(ZnO) = 3..................[:=> Show Contents <=:]



HOSPITAL WASTE MANAGEMENT


Posted by: seminar projects crazy
Created at: Friday 30th of January 2009 12:58:54 PM
Last Edited Or Replied at :Wednesday 23rd of February 2011 09:54:13 PM
MANAGEMENT, WASTE , HOSPITAL, hospital waste management ppt , hospital, biomedical waste management in hospitals ppt , biomedical waste management project topics, characteristics of a good waste disposal system of a hospital , hospital waste management in india ppt, hospital biomedical waste disposal and ppt , hospital wastw management ppt, metods disposal solid waste hospital ppt , hospital waste management project report, hospital waste management project pdf file , powerpoint presentation on hospital waste management system, powered by mybb medical hospitals , project report on waste management in hospital, topics on waste management ppt , research paper topics on waste disposal of hospital,
l and Medical College Hospital has been done through proper study and so has almost all the components of a good waste management system. The key to the proper management of hospital waste lies not in most modern technologies, but in the application of appropriate and systematic waste managem..................[:=> Show Contents <=:]



Magnetic Amplifiers


Posted by: seminar projects crazy
Created at: Monday 26th of January 2009 10:40:13 PM
Last Edited Or Replied at :Monday 26th of January 2009 10:40:13 PM
Amplifiers, Magnetic , magnetic amplifier doc, series and parallel connections magnetic amplifier , magnetic amplifier, magnetic amplifier characteristics , characteristics magnetic amplifier, characteristics of magnetic amplifier , some points for seminar on magnetic amplifier, seminar topic on magnetic amplifiers , current measurement magnetic amplifier, measuring current low currents transformer magnetic amplifier , magnetic amplifier seminar, seminar on magnetic amplifier , mag amp priciples, magamp post regulator , amplifying magnetic fields, andrew piaskowski magnetic amplifier ,
which either core will saturate. In saturation, the AC winding on the saturated core will go from a high impedance state (off) into a very low impedance state (on) - that is, the control current controls at which voltage the mag amp switches on.

A relatively small DC current on the control winding is able to control or switch large AC currents on the AC windings. This results in current amplification.

Applications

Magnetic amplifiers were used extensively as the switching element in early switched-mode (SMPS) power supplies, as well as in lighting control..................[:=> Show Contents <=:]



Low-Voltage Differential Signaling LVDS


Posted by: computer science crazy
Created at: Sunday 21st of September 2008 12:42:32 AM
Last Edited Or Replied at :Monday 04th of July 2011 12:17:18 PM
LVDS , Signaling, Differential , Low Voltage, low voltage differential signalling , low voltage signaling, low voltage differential signaling seminar , low voltage differential signaling, lvds seminars and ppts , poster presentation on low voltage differential signaling, low voltege differential signaling , lvds rs422 single ended interface scheme, low votage differential signalling seminar report , lvds sminar report, seminar report low voltage differential signaling pdf , seminar report on low voltage differential signalling pdf file, low voltage differential signaling seminar pdf , lvds abstract and report doc, tia eia 899 electrical characteristics of multipoint low voltage differential signaling ,
gh data rates while consuming significantly less power than competing technologies. In addition, it brings many other benefits, which include:

a)Low-voltage power supply compatibility
b)Low noise generation
c)High noise rejection
d)Robust transmission signals
e) Ability to be integrated into system level ICs

LVDS technology allows products to address high data rates ranging from 100's of Mbps to greater than 2 Gbps. For all of the above reasons, it has been deployed across many market segments wherever the need for speed and low power exists.

Consumers are demanding more realist..................[:=> Show Contents <=:]



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